Search results for " Materials processing"

showing 2 items of 2 documents

Properties Augmentation of Cast Hypereutectic Al–Si Alloy Through Friction Stir Processing

2022

AbstractThe present endeavour is to augment mechanical attributes via friction stir processing (FSP) in hypereutectic aluminium–silicon castings by the means of microstructural modifications and defects reduction. Wherein, the study proceeds with mainly two approaches namely, alteration in tool revolution (TR) and the number of FSP passes. The prepared specimens were evaluated investigating volume fraction of porosities, microstructural characterizations and microhardness. Therefrom, the specimen with highest number of passes delivered most uniform properties resulting from the reduction in casting porosities and refined silicon particle uniform distribution throughout friction stir process…

Casting modification; Materials processing; Friction stir processing; Aluminium; Porosity; Grain refinementMechanics of MaterialsMetals and AlloysMetallurgy and Metallic MaterialsMaterials ChemistryMaterialkemiAluminium Casting modification Friction stir processing Grain refinement Materials processing PorosityMetallurgi och metalliska materialCondensed Matter PhysicsSettore ING-IND/16 - Tecnologie E Sistemi Di Lavorazione
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Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas

2012

The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…

Materials scienceta221Analytical chemistryplasma etchingAtomic layer depositionEtch pit densityEtching (microfabrication)SputteringAIN filmsetchingta318Reactive-ion etchingThin filmta216ta116plasma depositionPlasma etchingta213ta114business.industryPhysicsSurfaces and Interfacesatomikerroskasvatusplasma materials processingCondensed Matter PhysicsSurfaces Coatings and Filmsplasmakasvatusthin filmsOptoelectronicsbusinessBuffered oxide etch
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